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罗强(20届博士)

【来源: | 发布日期:2020-11-23 】

罗强,2020届博士生

教育经历:

(1)2016-09至2020-11,华中科技大学,光学与电子信息学院,博士,导师:游龙

(2)2013-09至2016-06,北京理工大学,材料物理与化学,硕士,导师:曹茂盛

(3)2009-09至2013-06,湖北理工学院,无机非金属材料工程,学士

参加科研项目:

(1)国家自然科学基金委员会,青年基金项目,61904060,非破坏性读出的铁电互补逻辑机制研究及器件制作,2020-01至2022-12,23万元,在研,参加。

(2)中国博士后科学基金会,第65批面上资助,2019M652642,铁电基纳米裂纹实现的非破坏性读出互补逻辑器件,2019-03至2020-03,8万元,在研,参加。

毕业去向:武汉长江存储科技有限责任公司

代表性研究成果:

[1] Luo Q., Guo Z., Zhang S., Yang X. F., Zou X. C., Hong J. and You L. Crack-based complementary nanoelectromechanical switches for reconfigurable computing. IEEE Electron Device Letters, 2020, 41(5): 784~787. (Editor’s pick, cover paper).

[2] Luo Q., Guo Z., Huang H. B., Zou Q. M., Jiang X. W., Zhang S., Wang H. J., Song M., Zhang B., Chen H., Gu H. S., Han G. Q., Yang X. F., Zou X. C., Wang K.-Y., Liu Z. Q., Hong J., Ramesh R. and You L. Nanoelectromechanical switches by controlled switchable cracking. IEEE Electron Device Letters, 2019, 47(7): 1209~1213. (共同一作)

[3] Luo Q., Guo Z., Zhang S., Yang X. F., Zou X. C., Hong J. and You L. Controlled ferroelectric nano-cracking for low-power functional applications. SCIENCE CHINA: Information Science, 2020. (Under revised).

[4] Guo Z., Luo Q., Huang H. B., Zhang S., Yang X. F., Hong J. and You L. Low-energy complementary ferroelectric-nanocrack logic. Nano Energy, 2020, 75: 104871.

[5] Hong J., Luo Q., Jung D., Geun S., Kim Y., Im M.-Y., Hwang C.-C., Khizroev S., Chung S. and You L. Shape transformation and self-alignment of Fe-based nanoparticles. Nanoscale Advance, 2019, 1: 2523~2528.

[6] Song M., Luo S. J., Li X., Zhang S., Luo Q., Guo Z., Hong J., Zhou B., Gu H. S., Lee O., and You L. Spin–Orbit Torque-Driven Magnetic Switching of Co/Pt-CoFeB Exchange Spring Ferromagnets. IEEE Transactions on Magnetics, 2019, 55(8): 1401104.

[7] Zhang S., Luo S. J., Xu N., Zou Q. M., Song M., Yun J. J., Luo Q., Guo Z., Li R. F., Tian W. C., Li X., Zhou H. A., Chen H. M., Zhang Y., Yang X. F., Jiang W. J., Shen K., Hong J., Yuan Z., Xi L., Xia K., Salahuddin S., Dieny B. and You L.. A Spin–Orbit-Torque Memristive Device. Advanced Electronic Materials, 2019, 1800782.

[8] Chen H. M., Song M., Guo Z., Li R. F., Zou Q. M., Luo S. J., Zhang S., Luo Q., Hong J. and You L. Highly Secure Physically Unclonable Cryptographic Primitives Based on Interfacial Magnetic Anisotropy. Nano Letters, 2018, 18(11): 7211~7216.