转自：https://www.mram-info.com/researchers-develop-sub-10-nm-stt-mtj
Researchers from UC Berkeley and the Huazhong University of Science and Technology developed sub 10-nm STT MTJs that shows a thermal stability factor of more than 80.
The reserachers say that the highly efficient and dense MTJ could lead to higher efficiency and density STT-MRAM devices and spin-based computers.
Source: Nanowerk
Tags: STT-MRAM
Technical / Research
Posted: Aug 12, 2018 by Ron Mertens
